在接下来的工作中，发现一些意外，这是常用的具有双极性器件（即p型和n型）的行为。这显着延长的有机CMOS电路选择合适的材料。许多有特殊高的电子亲和势（EA）和窄间隙有机半导体具有较早启用N沟道场效应管歪了不幸的是准可逆掺杂过程是沉浸在目前这个工作而脆弱。 目前的工作包括一个底栅场效应晶体管器件的配置使用，其中交联BCB提供缓冲栅介质界面的半导体聚合物。BCB层涂布在P + Si /二氧化硅基板是用在这里作为权宜之计的底栅衬底。他们还用一些低功函数的Ca电极使真正的电子迁移率独家没有正确的接触电阻影响的勇气。然而，他们也有更高的功函数的电极获得n-FET，包括铝和金，虽然具有较低的表观迁移率。的传递和其他输出特性的装置，测定在氮由半导体参数分析仪。典型的n-FET特征是基于聚合物的动态特性的影响。这些设备被认为是具有干净的N型场效应的操作与低阈值电压，也可以减少通道长度和介质厚度会明显降低操作电压。对这些特性的插图设计清楚地表明了一个干净的线性（二次）电流对栅极电压的晶体管的线性依赖（饱和）操作制度。
In the following work, it is revealed that unexpectedly that some of the devices which are commonly used exhibit ambipolar (that is, both p- and n-type) behaviour. This significantly extends the choice of suitable materials for organic CMOS circuits. A lot of the special high electron affinity (EA) and narrow-gap organic semiconductors which has earlier enabled n-channel FETs crooked out unfortunately to be rather vulnerable to quasi-irreversible doping processes which are whelmed in this present work.The present work comprises the use of a bottom-gate FET device configured, in which the crosslinked BCB provides the buffer gate dielectric interface to the semiconducting polymer. The BCB layer is coated over p++ -Si/SiO2 substrates which are used here as expedient bottom-gate substrates. They also used some low work function Ca electrodes which enable the grit of the true electron mobilities exclusive of having not to correct the contact resistance effects. Yet, they have also obtained n-FETs with higher work function electrodes, including Al and Au, although with lower apparent mobilities. The transfer and other output characteristics of the devices were measured in nitrogen by a semiconductor parameter analyser. Typical characteristics of the n-FETs are based on the polymer which can affect the dynamic characteristics. These devices which are considered exhibit clean n-type field-effect operation with low threshold voltage, they also reduce the channel length and dielectric thickness which will clearly reduce the operation voltage. The inset of the transfer characteristics of these devised clearly demonstrates a clean linear (quadratic) dependence of the transistor current on the gate voltage in the linear (saturation) operating regime.